- PII
- 10.31857/S0132665122600923-1
- DOI
- 10.31857/S0132665122600923
- Publication type
- Status
- Published
- Authors
- Volume/ Edition
- Volume 49 / Issue number 5
- Pages
- 512-521
- Abstract
- This paper discusses the technology of formation of photoresistive structures based on a composite of lead selenide and lead selenite. The structures are formed by the oxidation of n-PbSe polycrystalline films. Film The surface modification mechanism of n-PbSe films in the oxidation process is analyzed by a Zeiss Merlin scanning electron microscope (SEM). The new results of the authors on the oxidation mechanism of n-PbSe, together with their earlier publications, are summarized and their consistency with each other is examined. A theoretical model (hypothesis) of the potential profile of a photosensitive heterojunction is proposed, in which each crystal of the n-PbSe film during oxidation in an atmosphere of dry air forms a continuous shell on the p-PbSeO3 surface. The hypothesis on the structural model of the photosensitive heterojunction proposed by other authors, which is based on the oxidation mechanism proposed by us, is practically confirmed in this study.
- Keywords
- полупроводниковые пленки фотопроводимость селенид свинца селенит свинца двухфазный композит ультрафиолет оптическое излучение источник ионов Ga<sup>+</sup>
- Date of publication
- 16.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 2
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